IndiumV3, Main, Repository, bibRecord, 000082

Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

Identifieur interne : 000082 ( Main/Repository ); précédent : 000081; suivant : 000083

Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

Auteurs : RBID : Pascal:14-0038063

Descripteurs français

Pascal (Inist)
- Taux conversion, Coût production, Cellule solaire, Couche tampon, Evaluation performance, Recuit, Eclairement, Hétérojonction, Système tampon, Zinc, Séléniure d'indium, Séléniure de cuivre, Séléniure de gallium, Composé quaternaire, Oxyde de zinc, Sulfure de zinc, Verre, Molybdène, Cuivre, Couche mince, Cu(In,Ga)Se2, ZnO, ZnS.
Wicri :
- concept : Zinc, Verre, Molybdène, Cuivre.

English descriptors

KwdEn :
- Annealing, Buffer layer, Buffer system, Conversion rate, Copper, Copper selenides, Gallium selenides, Glass, Heterojunction, Illumination, Indium selenides, Molybdenum, Performance evaluation, Production cost, Quaternary compound, Solar cell, Thin film, Zinc, Zinc oxide, Zinc sulfide.

Abstract

In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se₂ (CIGSe)-based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as-grown CIGSe surface. This approach has now been tested with high-quality lab-scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post-deposition annealing or light soaking.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000199

Links to Exploration step

Pascal:14-0038063

Le document en format XML

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<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0038063 INIST</idno>
<idno type="RBID">Pascal:14-0038063</idno>
<idno type="wicri:Area/Main/Corpus">000199</idno>
<idno type="wicri:Area/Main/Repository">000082</idno>
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<seriesStmt><idno type="ISSN">1062-7995</idno>
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<title level="j" type="main">Progress in photovoltaics : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Buffer layer</term>
<term>Buffer system</term>
<term>Conversion rate</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Gallium selenides</term>
<term>Glass</term>
<term>Heterojunction</term>
<term>Illumination</term>
<term>Indium selenides</term>
<term>Molybdenum</term>
<term>Performance evaluation</term>
<term>Production cost</term>
<term>Quaternary compound</term>
<term>Solar cell</term>
<term>Thin film</term>
<term>Zinc</term>
<term>Zinc oxide</term>
<term>Zinc sulfide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Taux conversion</term>
<term>Coût production</term>
<term>Cellule solaire</term>
<term>Couche tampon</term>
<term>Evaluation performance</term>
<term>Recuit</term>
<term>Eclairement</term>
<term>Hétérojonction</term>
<term>Système tampon</term>
<term>Zinc</term>
<term>Séléniure d'indium</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Composé quaternaire</term>
<term>Oxyde de zinc</term>
<term>Sulfure de zinc</term>
<term>Verre</term>
<term>Molybdène</term>
<term>Cuivre</term>
<term>Couche mince</term>
<term>Cu(In,Ga)Se2</term>
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<front><div type="abstract" xml:lang="en">In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se<sub>2</sub>
 (CIGSe)-based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as-grown CIGSe surface. This approach has now been tested with high-quality lab-scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post-deposition annealing or light soaking.</div>
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</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KLENK (Reiner)</s1>
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<fA11 i1="02" i2="1"><s1>STEIGERT (Alexander)</s1>
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<fA11 i1="03" i2="1"><s1>RISSOM (Thorsten)</s1>
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<fA11 i1="04" i2="1"><s1>GREINER (Dieter)</s1>
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<fA11 i1="05" i2="1"><s1>KAUFMANN (Christian A.)</s1>
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<fA11 i1="06" i2="1"><s1>UNOLD (Thomas)</s1>
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<s5>01</s5>
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<s5>05</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
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<s2>NK</s2>
<s5>23</s5>
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<s5>24</s5>
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<s2>NK</s2>
<s5>24</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>25</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>25</s5>
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<s5>26</s5>
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<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>27</s5>
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<s5>27</s5>
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<s5>27</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Sulfure de zinc</s0>
<s5>28</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Zinc sulfide</s0>
<s5>28</s5>
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<fC03 i1="16" i2="X" l="SPA"><s0>Zinc sulfuro</s0>
<s5>28</s5>
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<s5>29</s5>
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<s2>NC</s2>
<s5>31</s5>
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<s2>NC</s2>
<s5>31</s5>
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<s5>32</s5>
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<fC03 i1="20" i2="X" l="ENG"><s0>Thin film</s0>
<s5>32</s5>
</fC03>
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<s5>32</s5>
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<fC03 i1="21" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0>
<s4>INC</s4>
<s5>82</s5>
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<s4>INC</s4>
<s5>83</s5>
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<s5>84</s5>
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   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
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   |clé=     Pascal:14-0038063
   |texte=   Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%
}}

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Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

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